Bias and illumination-dependent room temperature negative differential conductance in Ni-doped ZnO/p-Si Schottky photodiodes for quantum optics applications

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dc.contributor.authorOcaya, Richard O.
dc.contributor.authorOrman, Yusuf
dc.contributor.authorAl-Sehemi, Abdullah G.
dc.contributor.authorDere, Aysegul
dc.contributor.authorAl-Ghamdi, Ahmed A.
dc.contributor.authorYakuphanoglu, Fahrettin
dc.date.accessioned2024-02-08T05:08:32Z
dc.date.available2024-02-08T05:08:32Z
dc.date.issued2023
dc.description.abstractIn this article, evidence for the existence of illumination and bias-dependent negative differential conductance (NDC) in Ni-doped Al/ZnO/p-Si Schottky diodes, and the possible mechanism for its origin, are presented. The atomic percentages of Ni doping were 0%, 3%, 5%, and 10%. NDC is observed between -1.5 V to -0.5 V in reverse bias under illumination, but only at certain doping levels and specific forward bias. Furthermore, the devices show excellent optoelectronic characteristics in the photoconductive and photovoltaic modes, with device open circuit voltages ranging from 0.03 V to 0.6 V under illumination.en_ZA
dc.description.versionPublisher's versionen_ZA
dc.identifier.citationOkay, R. O., Orman, Y., Al-Sehemi, A. G., Dere, A., Al-Ghamdi, A. A., & Yakuphanoglu, F. (2023). Bias and illumination-dependent room temperature negative differential conductance in Ni-doped ZnO/p-Si Schottky photodiodes for quantum optics applications. Heliyon, 9, e16269. https://doi.org/10.1016/j.heliyon.2023.e16269en_ZA
dc.identifier.issn2405-8440
dc.identifier.urihttps://doi.org/10.1016/j.heliyon.2023.e16269
dc.identifier.urihttp://hdl.handle.net/11660/12373
dc.language.isoenen_ZA
dc.publisherCell Pressen_ZA
dc.rights.holderAuthor(s)en_ZA
dc.rights.licensehttp://creativecommons.org/licenses/by-nc-nd/4.0/en_ZA
dc.subjectNegative differential conductivityen_ZA
dc.subjectSeries resistance compensationen_ZA
dc.subjectNi-doped ZnOen_ZA
dc.subjectBiasen_ZA
dc.subjectIlluminationen_ZA
dc.titleBias and illumination-dependent room temperature negative differential conductance in Ni-doped ZnO/p-Si Schottky photodiodes for quantum optics applicationsen_ZA
dc.typeArticleen_ZA
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